عنوان مقاله [English]
The AlGaN/GaN heterostructure is used in power devices. Therefore,having large current density and breakdown voltage is important. The effect of different parameters on 2D electron gas is investigated and the best cases are shown. Also it is shown that, in some cases, there is an accumulation of holes on the top surface of AlGaN. But, because of the existence of traps, it is not seen experimentally. Then, the effect of traps on 2D electron gas is investigated. Finally, methods of increasing breakdown voltage are discussed, one case is simulated and it is shown how breakdown voltage increases.