عنوان مقاله [English]
The boltzmann Transport Equation (BTE) is the basic differential equation used for simulation of semiconductor devices. BTE is a semiclassical equation that doesn't include quantum effects. Using the Wigner transport equation, a correction to BTE can be obtained that includes quantum effects. In this paper, the Monte Carlo method was used for solving quantum corrected BTE for a Resonant Tunneling Diode (RTD). As expected, a negative resistance in the current- voltage curve was observed. To obtain a deep insight into such behavior, the current-voltage curve was divided into three regions. In each region the effects of electrostatic potential, effective potential and carrier density variations on the current- voltage curve were studied.